 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 40V P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 18A R DS (ON) ( m W ) Max ID -14A R DS (ON) ( m W ) Max 24 @ V G S = 10V 30 @ V G S = 4.5V D1 35 @ V G S = -10V 50 @ V G S = -4.5V D2 D1/D2 G1 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed a S ymbol VDS VGS 25 C 70 C ID IDM IS Tc= 25 C Tc= 70 C PD TJ, TS TG N-C hannel P-C hannel 40 20 18 15 50 8 11 7.7 -55 to 175 -40 20 -14 -11 -50 -6 Unit V V A A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W S T U409DH N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 8A VGS =4.5V, ID= 6A VDS = 5V, VGS = 4.5V VDS = 10V, ID= 8A Min Typ C Max Unit 40 1 10 1 1.8 18 23 20 17 700 120 75 3 V uA uA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 24 m ohm 30 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 20V ID = 3 A VGS = 10V R GE N = 3 ohm VDS =20V, ID =8A,VGS =10V VDS =20V, ID =8A,VGS =4.5V VDS =20V, ID = 8 A VGS =10V 2 11 12 45 11 14 7 1.6 3.4 ns ns ns ns nC nC nC nC S T U409DH P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = -250uA VDS = -32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID= -6A VGS =-4.5V, ID= -4A VDS = -5V, VGS = -10V VDS = -10V, ID = -6A Min Typ C Max Unit -40 -1 10 -1 -1.8 28 42 -20 11 1000 175 95 -3 V uA uA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 35 m ohm 50 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -20V ID = -3A VGS = -10V R GE N = 3 ohm VDS =-20V, ID =-6A,VGS =-10V VDS =-20V, ID =-6A,VGS =-4.5V VDS =-20V, ID = -6 A VGS =-10V 3 11 15 72 30 17.5 8.5 2.3 4.5 ns ns ns ns nC nC nC nC S T U409DH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =8A VGS = 0V, Is =-6A N-Ch P-Ch Min Typ Max Unit 0.94 -0.87 1.3 -1.3 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. b.Guaranteed by design, not subject to production testing. N-Channel 50 V G S =5V 20 V G S =4.5V VGS =10V 40 16 ID, Drain C urrent(A) 30 V G S =3.5V 20 V G S =3V V G S =2.5V 0 0 ID, Drain C urrent (A) V G S =4V 12 T j=125 C 8 25 C 4 0 -55 C 10 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 2.0 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 50 1.8 1.6 1.4 1.2 1.0 0.0 V G S =4.5V ID=6A V G S =10V ID=8A R DS (on) (m W) 40 30 20 V G S =10V 10 0 V G S =4.5V 1 10 20 30 40 50 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 STU409DH BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250uA 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 6 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 60 Figure 6. Breakdown Voltage Variation with Temperature 20.0 ID=8A 50 RDS(on) (m W) 40 125 C 30 20 75 C 10 0 25 C Is, Source-drain current (A) 10.0 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 VGS, Gate- Source Voltage (V) VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 5 S T U409DH 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =20V ID=8A 1000 C , C apacitance (pF ) 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 C is s 6 25 30 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 300 S witching T ime (ns ) 100 80 T D(off) Tr T D(on) Tf ID, Drain C urrent (A) 100 60 10 10 R DS ( ) ON L im it 10 10 ms 1m s 1s DC 0m s 1 1 V DS =20V ,ID=3A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 2 F igure 12. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T U409DH P-C hannel 25 V G S =-10V 20 V G S =-5V V G S =-4.5V -ID, Drain C urrent(A) 20 16 -ID, Drain C urrent (A) 15 10 V G S =-4V V G S =-3.5V 12 T j=125 C 8 25 C 4 0 -55 C 5 0 V G S =-3V 0 0.5 1 1.5 2 2.5 3 0 1.0 2.0 3.0 4.0 5.0 6.0 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 90 1.5 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 75 1.4 1.3 1.2 1.1 1.0 0.0 R DS (on) (m W) V G S =-10V ID=-6A 60 V G S =-4.5V 45 30 V G S =-10V 15 0 V G S =-4.5V ID=-4A 1 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) -ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T U409DH B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=-6A -Is , S ource-drain current (A) 100 10.0 R DS (on) (m W) 80 60 40 20 0 75 C 25 C 125 C 125 C 25 C 75 C 0 2 4 6 8 10 1.0 0.3 0.5 0.7 0.9 1.1 1.3 -V G S , G ate- S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T U409DH C is s 1000 -V G S , G ate to S ource V oltage (V ) 1200 10 8 6 4 2 0 VDS =-20V ID=-6A C , C apacitance (pF ) 800 600 400 200 C rs s 0 0 5 10 15 20 25 30 C os s 6 0 3 6 9 12 15 18 21 24 -V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance 300 S witching T ime (ns ) Tr T D(off) F igure 10. G ate C harge 70 -ID, Drain C urrent (A) (O N Tf T D(on) )L 100 60 10 50 im i t 10 0 1 s ms 10 10 RD ms S DC 1 1 V DS =-20V ,ID=-3A V G S =10V 1 0.03 VGS =-10V S ingle P ulse T c=25 C 0.1 1 10 30 60 6 10 60 100 300 600 R g, G ate R es is tance (W) -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 2 F igure 12. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 S T U409DH P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H C M K J D L S P G REF . Millimeters MIN MAX A B C D P S G H J K L M 6.40 5.2 6.80 2.20 0.50 0.40 2.20 0.45 0 0.90 5.40 6.80 5.50 10.20 3.00 0.80 0.60 2.40 0.60 0.15 1.50 5.80 1.27 REF. 10 S T U409DH TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape 6 4 TO-252-4L Reel UNIT:P 11 |
Price & Availability of STU409DH
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |